Applied Sciences Research Periodicals

A Gravimetric Method for the Determination of Total Silica as SiO2 Content in Ultra Temp 516-T Sample by ASTM Method

Yusuf Yildiz, Alyssa Bitar, Thaim Evan English — Fri, 05 Sep 2025 00:00:00 +0100

The silica content, expressed as a percentage by the mass of SiO₂. ASTM-D-501 Gravimetric Method Section 51. Standard Method specifies a gravimetric method for the determination of the silica content of ceramacoat thinner. This gravimetric test method covers procedures for the chemical analysis of silica content (SiO₂) in Ceramacoat 512-T Thinner. In this study. Percent silica content has been determined successfully. The results of the gravimetrically determination of silica in Ceramacoat sample were %23.63, and %23.37 in respectively. Percent Standard Deviation is % 1.56.

Chromium and Fluorine Insolubilize Agents and a Treatment Method on Biomass Incinerated Ash

Thu, 04 Sep 2025 00:00:00 +0100

Biomass incinerated ash sometimes contains hazardous substances such as hexavalent chromium and fluorine, which poses an obstacle to recycling. In order to remove or insolubilize these harmful substances, aqueous solution of Iron (II) sulfate and mixed solution of sulfuric acid and calcium hydrogen phosphate were added to the incineration ash. In order to thoroughly detoxify the ash, we devised a method in which an excessive amount of treatment liquid is added to the ash, and the surplus water generated is used for monitoring or reused as treatment water. This made it possible to reduce the harmful substances in the ash to below the environmental standard value in a short time.

Electrical Properties of Silicon Nanowire MOS Device

Ravi Kumar Chanana — Fri, 12 Sep 2025 00:00:00 +0100

In this research article, the electrical properties of a 1nm diameter Silicon nanowire MOSFET are calculated utilizing the universal mass-energy equivalence relation for the semiconductors to find the intrinsic Fermi energy level in the bandgap below the Silicon conduction band. The conduction band offset, Fowler-Nordheim electron tunnelling onset field, leakage current density in the oxide at FN onset field, the electrical oxide breakdown field, the total interface trap density, and the average channel electron mobility are all surveyed and calculated theoretically. The determined properties suggest robustness of the SiNW MOS device.