Transition of Valence Electron to the Conduction Band in Silicon

Abstract

This short communication presents the phenomenon of transition of a valence electron to the conduction band edge in Silicon as analogous to a ball of mass m falling from height h to the ground.  The universal mass-energy equivalence relation is followed in this phenomenon due to conservation of energy for the constant mechanical energy with time.  The relation is also pointed to be a common feature for Einstein’s theory of relativity and Newton’s law of gravitation.  Errors in electron effective masses in Silicon and Silicon dioxide in an earlier publication on drifting electrons in materials is discussed and corrected.