Electrical Properties of Silicon Nanowire MOS Device

Abstract

In this research article, the electrical properties of a 1nm diameter Silicon nanowire MOSFET are calculated utilizing the universal mass-energy equivalence relation for the semiconductors to find the intrinsic Fermi energy level in the bandgap below the Silicon conduction band.  The conduction band offset, Fowler-Nordheim electron tunnelling onset field, leakage current density in the oxide at FN onset field, the electrical oxide breakdown field, the total interface trap density, and the average channel electron mobility are all surveyed and calculated theoretically.  The determined properties suggest robustness of the SiNW MOS device.