Intrinsic Fermi Energy Level in Materials Having a Bandgap

Abstract

This brief review mainly highlights the applications of the determined intrinsic Fermi energy level in semiconductors and insulator materials.  The electrical properties of a Metal-Oxide-Semiconductor (MOS) device designed on any parabolic semiconductor and having SiO₂ as the oxide dielectric, can be calculated theoretically once the intrinsic Fermi energy levels in the semiconductor and the oxide are known.  Also, Hetero junction devices can be better designed with this known intrinsic Fermi energy level in materials.