Direction-dependent Conductivity Effective Masses of Carriers at Velocity Saturation in Semiconductors

Abstract

This short communication further clarifies the physics-related concepts on semiconductors.  It then consolidates the finding of the intrinsic Fermi energy level E_i in semiconductors, given the conductivity effective mass for electrons at velocity saturation, or determines the conductivity effective mass for electrons at velocity saturation, given the intrinsic Fermi energy level in a semiconductor.  Here Silicon is used as an example.