Saturated Electron Drift Velocity in a Semiconductor Got from the Constant Zone-Averaged Conductivity Effective Mass

Abstract

This short communication presents the drift velocity of electrons at saturation under high electric fields in a particular direction in semiconductors, at 300K of temperature.  8K temperature is also considered for Ge[100].  The velocities are calculated using the underlying property of conductivity effective mass of electrons at velocity saturation for one conduction valley that is zone-averaged and remains constant under electric field and temperature stress.  The velocities are presented in Table1.  The Table also shows a 12-18% heat energy loss when calculated and observed values of the saturated drift velocities of electrons are compared.  The heat energy loss is presented in the last column of the Table.