Intrinsic and Pinned Fermi Energy Levels in GaN and SiC

Abstract

This paper clearly shows how the Physics of the universal mass-energy equivalence relation for electrons in its differential form is applied to the calculations of the intrinsic and pinned Fermi energy levels in the bandgap of the future semiconductors 2H-GaN and 4H-SiC on which high power and high voltage devices like HEMT and MOSFET are being considered respectively.  The calculation results are presented and the application of the physical principle is established as the calculated pinned energy levels of 1.0 eV below the semiconductor conduction band match the observed experimental Schottky barrier heights on both materials.