Energy at the Fermi Level Pinning in the J.C. Bose’s Point Contact Diode of the 1894 – 1898 Period on Galena

Abstract

This paper clearly shows how Einstein’s mass-energy equivalence relation in its differential form gives the intrinsic and pinned Fermi energy levels in the bandgap of a semiconductor.  J.C. Bose’s Galena (PbS) based point contact diode was used to confirm the above.  This extends the evidence of new science in semiconductor materials.