Electron Mobility Estimate in GaN MOSFETs

Abstract

In this research article, estimation of electron mobility is made in GaN n-channel MOSFETs.  The technology for GaN MOSFETs is at an infant stage and an early prediction enables technology development.  The electron mobility in a Si (100) n-channel MOSFET is also made that vouches for the simple formula developed for the electron mobility estimation, though the long-channel Si MOSFET technology is now of the past.