Band Offsets at the Interface of 4H-SiC/SiO2

Authors

  • Ravi Kumar Chanana Self-Employed Independent Researcher, Gr. Noida-201310, India

DOI:

https://doi.org/10.63002/asrp.32.854

Keywords:

Band Offsets, MIS device, Fowler-Nordheim Tunnelling, Silicon Carbide, Silicon Dioxide

Abstract

The author through this brief communication wishes to publicize the findings of the band offsets at the Si-faced 4H-SiC/SiO2 interface through an intense and focused research in the area of Metal-Insulator-Semiconductor (MIS) characterization in an academic environment, since the starting of his Ph.D. in 1989 to eight years work from home from March 2017 to February 2025, a total of over 35 years. 

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Published

05-03-2025

Issue

Vol. 3 No. 2 (2025): Applied Sciences Research Periodicals

Section

Articles

License

Copyright (c) 2025 Ravi Kumar Chanana

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.