A Proposal of a Hetero Junction Bipolar Phototransistor
DOI:
https://doi.org/10.63002/asrp.303.929Keywords:
Hetero junctions, Intrinsic Semiconductors, PhototransistorAbstract
A hetero junction bipolar phototransistor is proposed in this short communication by adding a second n-Si junction in reverse bias to the already proposed photodiodes on intrinsic semiconductor materials. The transistor having the nano-GaAs emitter can function in the visible range of the electromagnetic spectrum.
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01-05-2025
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Copyright (c) 2025 Ravi Kumar Chanana

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