Photodiodes from Hetero Junctions of Intrinsic Nano-GaAs and Si Semiconductor Materials

Abstract

Hetero junction photodiodes as a light-activated switch or a photo detector in the visible range are proposed in this short communication.  The hetero junction can be formed with intrinsic GaAs as nanoparticles and intrinsic Si (100) surface.  The nanoparticles of intrinsic GaAs can provide bandgaps in the range of 1.65 to 3.26 eV visible range of electromagnetic spectrum. Other semiconductors can also be thought of in place of nano-GaAs for different wavelengths of radiations including infrared and ultraviolet.