Conservation of Energy Applied to Moving Electrons in Materials at Constant Drift Velocity Under High Electric Fields

Abstract

In this research article, the electron effective mass of drifting electrons in intrinsic Silicon and amorphous thermal silicon dioxide has been calculated by equating the total mechanical energies of electrons at the cathode and anode of the metal-semiconductor-metal, metal-insulator-metal, and metal-insulator-semiconductor structures under high electric fields using the principle of conservation of energy.